国电南瑞半导体——IGBT模块
特点 Features
• 低开关损耗Low Switching Loss
• 高可靠性High Reliability
• 正温度系数Positive Temperature Coefficient
• 1700V 沟槽栅及场截止结构1700V Trench Gate & Field Stop Structure
• 高短路耐量High Short Circuit Capability
应用 Applications
• 大功率变流器High Power Converters
• 电机传动Motor Drives